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| > saturable absorber > SAM | SA | SOC| RSAM | SANOS | |||||||
| > microchip 1064 nm | |||||||
| > terahertz > THz spectrometer | photoconductive antenna | THz parts | |||||||
| > custom devices | |||||||
Custom devices |
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| > | Growth of semiconductor optoelectronic and electronic devices | ||||||
| We grow for you high quality epitaxial thin film stacks using the materials AlAs, GaAs, InAs, AlGaAs, AlInAs and InGaAs for different applications on GaAs wafers. | |||||||
| > | Low temperature grown GaAs devices | ||||||
| For some applications fast time response devices are needed e.g. for optical detectors, saturable absorbers or photoconductiver antennas. We grow such devices at low temperatures with short response times of pico- and femto-seconds. | |||||||
| > | Parameters | ||||||
| GaAs wafer diameter: | 2" and 4" | ||||||
| Maximum film stack thickness: | 5 µm | ||||||
| Proof of the film stack: | spectral reflectance, relaxation time of optical excited carriers | ||||||
| > | Prices | ||||||
| - 4" (100 mm) LT-GaAs wafer | EUR 3 500.- | lead time: 1 week (from stock) | |||||
| - 4" (100 mm) LT-InGaAs wafer | EUR 4 000.- | lead time: 1 week (from stock) | |||||
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- 4" (100 mm) LT-GaAs wafer with customized PCA structures |
EUR 7 000.- | lead time: 5 weeks | |||||
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