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| > saturable absorber > SAM | SA | SOC| RSAM | SANOS | |||||||
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| > custom devices | |||||||
Custom devices |
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| > | Growth of semiconductor optoelectronic and electronic devices | ||||||
| We grow for you high quality epitaxial thin film stacks for different purposes on GaAs wafers. The grown films of AlAs, GaAs, AlGaAs and InGaAs can be n- or p-doped in a wide range of doping level. Examples of such custom devices are laser- und superluminescent diodes in the wavelength region from 780 nm up to 980 nm, LEDs and photo-detectors. | |||||||
| > | Low temperature grown GaAs devices | ||||||
| For some applications fast time response devices are needed e.g. for optical detectors or saturable absorbers. We grow such devices at low temperatures with short response times of pico- and femto-seconds. | |||||||
| > | Parameters | ||||||
| GaAs wafer diameter: | 2" and 4" | ||||||
| Maximum film stack thickness: | 5 µm | ||||||
| Proof of the film stack: | low temperature photoluminescence, spectral reflectance, x-ray diffraction | ||||||
| > | Prices | After request. | |||||
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