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Energy band gap Eg of InxGa1-xAs alloys

Equation

The energy band gap of InxGa1-xAs alloys depends on the indium content x, but it is direct for all values of x between 0 and 1.
At room temperature (300 K) the dependency of the energy gap on the indium content x can be calculated using an equation given by R.E. Nahory et al in Appl. Phys. Lett. 33 (1978) p. 659

Eg(x) = 1.425 eV - x 1.501 eV + x2 0.436 eV

In this equation the symbols have the following meaning:

Numerical values

calculator calculator for Eg(x)   (uses javascript)

Band gap Eg(x) and gap wavelength λg of InxGa1-x As alloys at 300 K.

x Eg(x) (eV) λg (nm)
0 1.425 870
0.05 1.351 918
0.10 1.279 970
0.15 1.210 1025
0.20 1.142 1086
0.25 1.077 1151
0.30 1.014 1223
0.35 0.953 1301
0.40 0.894 1386
0.45 0.838 1480
0.50 0.784 1583
0.55 0.731 1696
0.60 0.681 1820
0.65 0.634 1957
0.70 0.588 2110
0.75 0.544 2278
0.80 0.503 2465
0.85 0.464 2672
0.90 0.427 2903
0.95 0.393 3159
1.00 0.360 3444